W25M02GVZEIG-TR Datasheet, PDF (41/68 Pages) Winbond – 3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS

W25M02GV
8.2.16 Read Data (03h)
The Read Data instruction allows one or more data bytes to be sequentially read from the Data Buffer
after executing the Read Page Data instruction. The Read Data instruction is initiated by driving the /CS
pin low and then shifting the instruction code “03h” followed by the 16-bit Column Address and 8-bit
dummy clocks or a 24-bit dummy clocks into the DI pin. After the address is received, the data byte of the
addressed Data Buffer location will be shifted out on the DO pin at the falling edge of CLK with most
significant bit (MSB) first. The address is automatically incremented to the next higher address after each
byte of data is shifted out allowing for a continuous stream of data. The instruction is completed by driving
/CS high.
The Read Data instruction sequence is shown in Figure 19a & 19b. When BUF=1, the device is in the
Buffer Read Mode. The data output sequence will start from the Data Buffer location specified by the 16-
bit Column Address and continue to the end of the Data Buffer. Once the last byte of data is output, the
output pin will become Hi-Z state. When BUF=0, the device is in the Continuous Read Mode, the data
output sequence will start from the first byte of the Data Buffer and increment to the next higher address.
When the end of the Data Buffer is reached, the data of the first byte of next memory page will be
following and continues through the entire memory array. This allows using a single Read instruction to
read out the entire memory array and is also compatible to Winbond’s SpiFlash NOR flash memory
command sequence.
Figure 19a. Read Data Instruction (Buffer Read Mode, BUF=1)
Figure 19b. Read Data Instruction (Continuous Read Mode, BUF=0)
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Publication Release Date: July 1, 2015
Preliminary - Revision B