W25M02GVZEIG-TR Datasheet, PDF (20/68 Pages) Winbond – 3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS

7.3 Status Register-3 (Status Only)
W25M02GV
Figure 3c. Status Register-3 (Address Cxh)
7.3.1 Look-Up Table Full (LUT-F) – Status Only
To facilitate the NAND flash memory bad block management, each stacked W25N01GV die is equipped
with an internal Bad Block Management Look-Up-Table (BBM LUT). Up to 20 bad memory blocks may be
replaced by a good memory block respectively. The addresses of the blocks are stored in the internal
Look-Up Table as Logical Block Address (LBA, the bad block) & Physical Block Address (PBA, the good
block). The LUT-F bit indicates whether the 20 memory block links have been fully utilized or not. The
default value of LUT-F is 0, once all 20 links are used, LUT-F will become 1, and no more memory block
links may be established.
7.3.2 Cumulative ECC Status (ECC-1, ECC-0) – Status Only
ECC function is used in NAND flash memory to correct limited memory errors during read operations. The
ECC Status Bits (ECC-1, ECC-0) should be checked after the completion of a Read operation to verify the
data integrity. The ECC Status bits values are don’t care if ECC-E=0. These bits will be cleared to 0 after a
power cycle or a RESET command.
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