W25M02GVZEIG-TR Datasheet, PDF (39/68 Pages) Winbond – 3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS

W25M02GV
8.2.14 Program Execute (10h)
The Program Execute instruction is the second step of the Program operation. After the program data are
loaded into the 2,112-Byte Data Buffer (or 2,048 bytes when ECC is enabled), the Program Execute
instruction will program the Data Buffer content into the physical memory page that is specified in the
instruction. The instruction is initiated by driving the /CS pin low then shifting the instruction code “10h”
followed by 8-bit dummy clocks and the 16-bit Page Address into the DI pin as shown in Figure 17.
After /CS is driven high to complete the instruction cycle, the self-timed Program Execute instruction will
commence for a time duration of tpp (See AC Characteristics). While the Program Execute cycle is in
progress, the Read Status Register instruction may still be used for checking the status of the BUSY bit.
The BUSY bit is a 1 during the Program Execute cycle and becomes a 0 when the cycle is finished and
the device is ready to accept other instructions again. After the Program Execute cycle has finished, the
Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Program Execute instruction will
not be executed if the addressed page is protected by the Block Protect (TB, BP2, BP1, and BP0) bits.
Figure 17. Program Execute Instruction
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Publication Release Date: July 1, 2015
Preliminary - Revision B