W25M02GVZEIG-TR Datasheet, PDF (38/68 Pages) Winbond – 3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS

W25M02GV
8.2.13 Quad Load Program Data (32h) / Quad Random Load Program Data (34h)
The “Quad Load Program Data” and “Quad Random Load Program Data” instructions are identical to the
“Load Program Data” and “Random Load Program Data” in terms of operation sequence and functionality.
The only difference is that “Quad Load” instructions will input the data bytes from all four IO pins instead of
the single DI pin. This method will significantly shorten the data input time when a large amount of data
needs to be loaded into the Data Buffer. The instruction sequence is illustrated in Figure 16.
Both “Quad Load Program Data” and “Quad Random Load Program Data” instructions share the same
command sequence. The difference is that “Quad Load Program Data” instruction will reset the unused
the data bytes in the Data Buffer to FFh value, while “Quad Random Load Program Data” instruction will
only update the data bytes that are specified by the command input sequence, the rest of the Data Buffer
will remain unchanged.
When WP-E bit in the Status Register is set to a 1, all Quad SPI instructions are disabled.
/CS
CLK
Mode 3
Mode 0
DI
(IO0)
DO
(IO1)
IO2
IO3
0
78
23 24 25 26 27
Instruction
32h / 34h
Column
Addr[15:0]
15
040404
040
High Impedance
51515
151
High Impedance
62626
262
High Impedance
73737
Data
0
Data
1
373
Data
2111
Figure 16. Quad Load / Quad Random Load Program Data Instruction
Mode 3
Mode 0
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