TA1317AN Datasheet, PDF (45/59 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Note
No.
Parameter
28 Horizontal DF amplitude
adjustment (H DF amp)
TA1317AN
SW5
OFF
SW6
B
SW7
ON
Test Condition
SW Mode
SW8 SW10 SW11 SW17 SW24
Test Method
(unless otherwise specified, V_CC = 9 V, Ta = 25 ± 3°C, data = preset values)
OFF B
ON
A
A (1) Input horizontal trigger pulse (figure below) to pin 12 (FBP IN).
Pulse level (HT) = 4.0 V
3 µs
Pulse level (HT)
H cycle = 63.5 µs
(2) Set H-DF CURVE (sub-address: 08) to maximum (data: F0).
(3) Set H-DF AMPLITUDE (sub-address: 07) to minimum (data: 80) and measure pin
16 (H-DF OUT) amplitude V_HD (80).
(4) Set H-DF AMPLITUDE (sub-address: 07) to center (data: 88) and measure pin 16
(H-DF OUT) amplitude V_HD (88).
(5) Set H-DF AMPLITUDE (sub-address: 07) to maximum (data: 8F) and measure pin
16 (H-DF OUT) amplitude V_HD (8F).
(6) Calculate change amounts V_HDP and V_HDN using the following formulas.
Pin 16 (H-DF OUT) waveform
V_HDP =
V_HDN =
V_HD (8F) − V_HD (88)
V_HD (88)
V_HD (80) − V_HD (88)
V_HD (88)
× 100
× 100
45
2002-09-06