TA1317AN Datasheet, PDF (38/59 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA1317AN
Note
No.
19
Parameter
EW bottom corner correction
(EW bottom corner) change
amount
SW5
OFF
SW6
B
SW7
ON
Test Condition
SW Mode
SW8 SW10 SW11 SW17 SW24
Test Method
(unless otherwise specified, V_CC = 9 V, Ta = 25 ± 3°C, data = preset values)
OFF B
ON
A
A (1) Input vertical trigger pulse to pin V_IN.
Pulse level (VT) = 3.0 V
(2) Apply external power supply (DC voltage = 7 V) to pin 3 (EHT IN).
(3) Set EW PARABOLA (sub-address: 0A) to center (data: 20).
(4) Set EW BTM CORNER (sub-address: 0D) to minimum (data: 00) and measure Pin
10 (EW FD) amplitude V_BC (00).
(5) Set EW BTM CORNER (sub-address: 0D) to maximum (data: F8) and measure Pin
10 (EW FD) amplitude V_BC (F8).
(6) Calculate change amounts V_BCP and V_BCN using the following formulas.
Pin 10 (EW FD) waveform
V_BCP =
V_BC (00) − V_PB (20)
V_PB (20)
× 100
V_BCN =
V_BC (F8) − V_PB (20)
V_PB (20)
× 100
38
2002-09-06