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TA1317AN Datasheet, PDF (21/59 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
Characteristics
Vertical S correction (V S correction)
change amount
Vertical integral correction
(V ∫ correction) change amount
Vertical EHT compensation (V EHT
compensation) change amount
EHT input dynamic range
Horizontal amplitude adjustment
(picture width) change amount
Parabola amplitude adjustment
(EW parabola) change amount
EW top corner correction
(EW top corner) change amount
EW bottom corner correction
(EW bottom corner) change amount
EW corner correction change amount
EW S correction change amount
EW trapezium correction change
amount
Horizontal EHT compensation (H-EHT
compensation) DC change amount
Parabola amplitude EHT
compensation
Symbol
VS (80)
VS (BF)
VS
V ∫ (80)
V ∫ (8F)
V∫
VE (80)
VE (87)
VEHT
VEHL
VEHH
VEV (00)
VEV (FC)
VEV
VPB (00)
VPB (20)
VPB (3F)
VPB
VTC (00)
VTC (F8)
VTCP
VTCN
VBC (00)
VBC (F8)
VBCP
VBCN
VM (00)
VM (F8)
VMP
VMN
VS (00)
VS (F8)
VSP
VSN
VET (00)
VET (FE)
VETP
VETN
VHC (80)
VHC (87)
VHC
EHT (1)
EHT (7)
EHT
Test
Circuit
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21
TA1317AN
Test Condition
Min Typ. Max Unit
1.92 2.26 2.60
Vp-p
(Note 12) 1.27 1.50 1.73
17
21
25
%
1.54 1.82 2.10
Vp-p
(Note 13) 1.62 1.90 2.18
3.0 4.0 5.2
%
1.58 1.86 2.14
Vp-p
(Note 14) 1.44 1.69 1.94
8.5 10.0 11.5 %
1.9 2.4 2.9
(Note 15)
V
5.9 6.4 6.9
5.20 6.15 7.10
(Note 16) 1.30 1.55 1.80
V
4.20 4.60 5.00
0.00 0.02 0.06
1.6 2.0 2.3
(Note 17)
Vp-p
2.8 3.3 3.8
2.8 3.3 3.8
2.3 2.8 3.2
Vp-p
0.9 1.2 1.4
(Note 18)
32
40
46
%
−46 −40 −32
2.4 2.8 3.2
Vp-p
0.9 1.2 1.4
(Note 19)
32
45
55
%
−52 −40 −35
2.4 2.8 3.2
Vp-p
0.8 1.1 1.4
(Note 20)
40
47
57
%
−52 −42 −32
2.2 2.6 3.0
Vp-p
1.0 1.4 1.6
(Note 21)
28
35
40
%
−40 −32 −27
2.4 2.7 3.0
ms
−3.0 −2.7 −2.4
(Note 22)
11.0 13.5 16.0
%
−16.0 −13.5 −11.0
3.0 3.6 4.2
(Note 23) 4.0 4.7 5.4
V
1.0 1.2 1.4
1.55 1.90 2.20
Vp-p
(Note 24) 1.65 2.00 2.30
2.7 4.0 5.3
%
2002-09-06