TA1317AN Datasheet, PDF (42/59 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA1317AN
Note
No.
23
Parameter
SW5
Horizontal EHT compensation OFF
(H-EHT compensation) DC
change amount
SW6
B
SW7
ON
Test Condition
SW Mode
SW8 SW10 SW11 SW17 SW24
Test Method
(unless otherwise specified, V_CC = 9 V, Ta = 25 ± 3°C, data = preset values)
OFF B
ON
A
A (1) Input vertical trigger pulse to pin V_IN.
Pulse level (VT) = 3.0 V
(2) Apply external power supply (DC voltage = 1 V) to pin 3 (EHT IN).
(3) Set H-EHT COMPENSATION (sub-address: 03) to minimum (data: 80) and
measure Pin 10 (EW FD) amplitude V_HC (80).
(4) Set H-EHT COMPENSATION (sub-address: 03) to maximum (data: 87) and
measure Pin 10 (EW FD) amplitude V_HC (87).
(5) Calculate change amount V_HC using the following formula.
V_HC (87)
V_HC (80)
V_HC = V_HC (87) − V_HC (80)
Pin 10 (EW FD) waveform
42
2002-09-06