TA1317AN Datasheet, PDF (35/59 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Note
No.
Parameter
15 EHT input dynamic range
TA1317AN
SW5
OFF
SW6
B
SW7
ON
Test Condition
SW Mode
SW8 SW10 SW11 SW17 SW24
Test Method
(unless otherwise specified, V_CC = 9 V, Ta = 25 ± 3°C, data = preset values)
OFF B
ON
A
A (1) Input vertical trigger pulse to pin V_IN.
Pulse level (VT) = 3.0 V
(2) Set VD (sub-address: 00) to AC-Coupling mode (data: 81).
(3) Set V SHIFT (sub-address: 01) data to 82.
(4) Connect external power supply V₃ to pin 3 (EHT IN).
(5) Set V-EHT COMPENSATION (sub-address: 02) to maximum (data: 87).
(6) Change external power supply V₃ from 1 to 7 V and monitor Pin 6 (V NF)
amplitude.
(7) When Pin 6 (V NF) amplitude changes, measure V₃ voltages V_EHL and V_EHH.
16 Horizontal amplitude
adjustment (picture width)
change amount
OFF B
ON OFF B
ON
A
V_EHL
V_EHH ^{Voltage applied to pin 3 (EHT IN) (V3)}
A (1) Input vertical trigger pulse to pin V_IN.
Pulse level (VT) = 3.0 V
(2) Set EW PARABOLA (sub-address: 0A) to minimum (data: 00).
(3) Set PICTURE WIDTH to maximum ( (sub-address: 01, data: FC) and (sub-address:
0C, data: 81) ) and measure Pin 10 (EW FD) voltage V_EV (FC).
(4) Set PICTURE WIDTH to minimum ( (sub-address: 01, data: 00) and (sub-address:
0C, data: 80) ) and measure Pin 10 (EW FD) voltage V_EV (00).
(5) Calculate change amount V_EV using the following formula.
V_EV = V_EV (FC) − V_EV (00)
35
2002-09-06