TA1317AN Datasheet, PDF (41/59 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Note
No.
Parameter
22 EW trapezium correction
change amount
TA1317AN
SW5
OFF
SW6
B
SW7
ON
Test Condition
SW Mode
SW8 SW10 SW11 SW17 SW24
Test Method
(unless otherwise specified, V_CC = 9 V, Ta = 25 ± 3°C, data = preset values)
OFF B
ON
A
A (1) Input vertical trigger pulse to pin V_IN.
Pulse level (VT) = 3.0 V
(2) Apply external power supply (DC voltage = 7 V) to pin 3 (EHT IN).
(3) Set EW PARABOLA (sub-address: 0A) to maximum (data: 3F).
(4) Set EW TRAPEZIUM (sub-address: 0B) to minimum (data: 00) and measure Pin 10
(EW FD) phase V_ET (00).
(5) Set EW TRAPEZIUM (sub-address: 0B) to maximum (data: FE) and measure Pin
10 (EW FD) phase V_ET (FE).
(6) Calculate change amounts V_ETP and V_ETN using the following formulas.
V_ET (FE) V_ET (00)
Pin 10 (EW FD) waveform
V_ET (FE)
V_ETP =
× 100
20
V_ET (00)
V_ETN =
× 100
20
41
2002-09-06