TA1317AN Datasheet, PDF (20/59 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA1317AN
Electrical Characteristics (unless otherwise specified, V_CC = 9 V, Ta = 25°C)
Current dissipation
Pin Name
V_CC
Symbol
Test
Circuit
Min
Typ.
Max
Unit
I_CC

40 50.8 62
mA
Pin voltages
Pin No.
1
5
Pin Name
V_REF
V -DC REF
Test
Symbol _Circuit Min Typ. Max Unit
V₁
 4.60 4.88 5.10
V
V₅
 4.60 4.88 5.10
V
AC Characteristics
Characteristics
Vertical trigger input shaped voltage
Timing pulse output voltage
Vertical ramp wave amplitude
Vertical drive amplification
Vertical drive output voltage
Vertical NF signal amplitude
Vertical phase adjustment 1 (V shift)
change amount
Vertical phase adjustment 2
(V centering) change amount
Vertical amplitude adjustment
(picture height) change amount
Vertical linearity correction
(V linearity) change amount
Vertical symmetry (V symmetry)
change amount
Symbol
V_TH
V_TCH
V_TCM
V_TCL
V_RMP
GV
V_4H
V_4L
V_NFM
V_DC (80)
V_DC (83)
V_DC
V_DD (00)
V_DD (FE)
V_DD
V_NFL
V_NFH
V_NFP
V_NFN
V₁ (00)
V₂ (00)
V₁ (80)
V₂ (80)
V₁ (F8)
V₂ (F8)
V_LIN
V_VT (00)
V_VT (FF)
V_VT
Test
Circuit





























Test Condition
Min Typ. Max Unit
(Note 1) 1.2 1.5 1.7
V
3.90 4.10 4.30
(Note 2) 2.95 3.15 3.35
V
0.97 1.07 1.17
(Note 3) 1.65 1.75 1.85 V_p-p
(Note 4) 21
24
27
dB
2.5 3.3 4.1
(Note 5)
V
0.00 0.00 0.30
(Note 6) 1.65 1.85 2.05 V_p-p
3.00 3.55 4.10
(Note 7) 5.65 6.20 6.75
V
2.30 2.65 3.00
1.64 1.82 2.00
(Note 8) 2.87 3.16 3.45
V
1.30 1.45 1.60
0.85 1.00 1.15
V_p-p
2.55 2.75 2.95
(Note 9)
43
48
53
%
−53 −48 −43
0.90 1.06 1.22
0.69 0.81 0.93
0.82 0.96 1.10
V_p-p
(Note 10) 0.77 0.91 1.05
0.73 0.86 0.99
0.85 1.00 1.15
9.5 10.5 12.5 %
4.60 4.95 5.20
(Note 11) 5.40 5.70 6.00
V
0.67 0.76 0.85
20
2002-09-06