DRV8702D-Q1 Datasheet, PDF (9/66 Pages) Texas Instruments – Automotive Half-Bridge Gate Driver

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DRV8702D-Q1, DRV8703D-Q1
SLVSDX8 – MARCH 2017
Electrical Characteristics (continued)
Over recommended operating conditions unless otherwise noted. Typical limits apply for T_A = 25°C and V_VM = 13.5 V
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
R_(IDRIVE) < 1 kΩ to GND (DRV8702D) or
IDRIVE = 3’b000 (DRV8703D)
20
R_(IDRIVE) = 33 kΩ to GND (DRV8702D) or
IDRIVE = 3’b001 (DRV8703D)
40
R_(IDRIVE) = 200 kΩ to GND (DRV8702D)
or IDRIVE = 3’b010 (DRV8703D)
95
I_{DRIVE(SNK_HS)}
High-side peak sink current
(V_VM = 13.5V)
IDRIVE = 3’b011 (DRV8703D)
IDRIVE = 3’b100 (DRV8703D)
130
mA
185
R_(IDRIVE) > 2 MΩ to GND (DRV8702D) or
IDRIVE = 3’b101 (DRV8703D)
265
R_(IDRIVE) = 68 kΩ to AVDD (DRV8702D)
or IDRIVE = 3’b110 (DRV8703D)
350
R_(IDRIVE) = 1 kΩ to AVDD (DRV8702D) or
IDRIVE = 3’b111 (DRV8703D)
440
R_(IDRIVE) < 1 kΩ to GND (DRV8702D) or
IDRIVE = 3’b000 (DRV8703D)
10
R_(IDRIVE) = 33 kΩ to GND (DRV8702D) or
IDRIVE = 3’b001 (DRV8703D)
20
R_(IDRIVE) = 200 kΩ to GND (DRV8702D)
or IDRIVE = 3’b010 (DRV8703D)
45
I_{DRIVE(SRC_LS)}
Low-side peak source current
(V_VM = 13.5V)
IDRIVE = 3’b011 (DRV8703D)
IDRIVE = 3’b100 (DRV8703D)
60
mA
90
R_(IDRIVE) > 2 MΩ to GND (DRV8702D) or
IDRIVE = 3’b101 (DRV8703D)
130
R_(IDRIVE) = 68 kΩ to AVDD (DRV8702D)
or IDRIVE = 3’b110 (DRV8703D)
180
R_(IDRIVE) = 1 kΩ to AVDD (DRV8702D) or
IDRIVE = 3’b111 (DRV8703D)
225
R_(IDRIVE) < 1 kΩ to GND (DRV8702D) or
IDRIVE = 3’b000 (DRV8703D)
20
R_(IDRIVE) = 33 kΩ to GND (DRV8702D) or
IDRIVE = 3’b001 (DRV8703D)
40
R_(IDRIVE) = 200 kΩ to GND (DRV8702D)
or IDRIVE = 3’b010 (DRV8703D)
95
I_{DRIVE(SNK_LS)}
Low-side peak sink current
(V_VM = 13.5V)
IDRIVE = 3’b011 (DRV8703D)
IDRIVE = 3’b100 (DRV8703D)
125
mA
180
R_(IDRIVE) > 2 MΩ to GND (DRV8702D) or
IDRIVE = 3’b101 (DRV8703D)
260
R_(IDRIVE) = 68 kΩ to AVDD (DRV8702D)
or IDRIVE = 3’b110 (DRV8703D)
350
R_(IDRIVE) = 1 kΩ to AVDD (DRV8702D) or
IDRIVE = 3’b111 (DRV8703D)
430
I_HOLD
I_STRONG
FET holding current
FET holdoff strong pulldown
Source current after t_DRIVE
Sink current after t_DRIVE
GH
GL
10
mA
40
750
mA
1000
R_(OFF)
FET gate holdoff resistor
Pulldown GH to SH
Pulldown GL to GND
150
kΩ
150
CURRENT SHUNT AMPLIFIER AND PWM CURRENT CONTROL (SP, SN, SO, VREF)
V_VREF
VREF input rms voltage
For current internal chopping
0.3 ⁽²⁾
3.6 V
(2) Operational at V_VREF = 0 to approximately 0.3 V, but accuracy is degraded.
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