DRV8702D-Q1 Datasheet, PDF (34/66 Pages) Texas Instruments – Automotive Half-Bridge Gate Driver

DRV8702D-Q1, DRV8703D-Q1
SLVSDX8 – MARCH 2017
www.ti.com
7.3.12 Charge Pump
A charge pump is integrated to supply the gate drive voltage of a high-side NMOS (V_GSH). The charge pump
requires a capacitor between the VM and VCP pins. Additionally, a low-ESR ceramic capacitor is required
between the CPH and CPL pins. When the VM voltage is below 13.5 V, this charge pump functions as a doubler
and generates a V_VCP equal to 2 × V_VM – 1.5 V if unloaded. When the VM voltage is more than 13.5 V, the
charge pump regulates V_VCP such that it is equal to V_VM + 10.5 V.
1F
VM
VCP
0.1 F
CPH
CPL
VM
Charge
Pump
Figure 43. Charge Pump Block Diagram
7.3.13 Gate Drive Clamp
A clamping structure limits the gate-drive output voltage to the V_C(GS) voltage to protect the power FETs from
damage. The positive voltage clamp is realized using a series of diodes. The negative voltage clamp uses the
body diodes of the internal predriver FET.
VGHS
VM
I(REVERSE)
GH
Predriver
VGLS
VGS > VC
IC
SH
VGS negative
GL
PGND
R(SENSE)
Figure 44. Gate Drive Clamp
34
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
Product Folder Links: DRV8702D-Q1 DRV8703D-Q1