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DRV8702D-Q1 Datasheet, PDF (11/66 Pages) Texas Instruments – Automotive Half-Bridge Gate Driver
www.ti.com
6.6 SPI Timing Requirements
t(CLK)
t(CLKH)
t(CLKL)
tsu(SDI)
th(SDI)
th(SDO)
tsu(SCS)
th(SCS)
t(HI_SCS)
Minimum SPI clock period
Clock high time
Clock low time
SDI input data setup time
SDI input data hold time
SDO output hold time
SCS setup time
SCS hold time
SCS minimum high time before SCS active low
DRV8702D-Q1, DRV8703D-Q1
SLVSDX8 – MARCH 2017
MIN
NOM
MAX UNIT
100
ms
50
ns
50
ns
20
ns
30
ns
40
ns
50
ns
50
ns
400
ns
6.7 Switching Characteristics
Over recommended operating conditions unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
POWER SUPPLIES (VM, AVDD, DVDD)
t(SLEEP)
Sleep time
t(wu)
Wake-up time
ton
Turnon time
CHARGE PUMP (VCP, CPH, CPL)
nSLEEP = low to sleep mode
nSLEEP = high to output change
VM > UVLO2 to output transition
100
µs
1
ms
1
ms
fS(VCP)
Charge-pump switching frequency VM > UVLO2
CONTROL INPUTS (IN1, IN2, nSLEEP, MODE, nSCS, SCLK, SDI)
200
400
700 kHz
tpd
Propagation delay
IN1, IN2 or PH, EN to GH or GL
FET GATE DRIVERS (GH, GH, SH, SH, GL, GL)
500
ns
t(DEAD)
Output dead time (DRV8702D-Q1)
Observed t(DEAD) depends on
IDRIVE setting
240
ns
TDEAD = 2’b00; Observed t(DEAD)
depends on IDRIVE setting
120
t(DEAD)
Output dead time (DRV8703D-Q1)
TDEAD = 2’b01; Observed t(DEAD)
depends on IDRIVE setting
TDEAD = 2’b10; Observed t(DEAD)
depends on IDRIVE setting
240
ns
480
TDEAD = 2’b11; Observed t(DEAD)
depends on IDRIVE setting
960
t(DRIVE)
Gate drive time
CURRENT SHUNT AMPLIFIER AND PWM CURRENT CONTROL (SP, SN, SO, VREF)
2.5
µs
VSP = VSN = GND to VSP = 240 mV,
VSN = GND, AV= 10; C(SO) = 200 pF
tS
Settling time to ±1%(1)
VSP = VSN = GND to VSP = 120 mV,
VSN = GND, AV= 20; C(SO) = 200 pF
VSP = VSN = GND to VSP = 60 mV,
VSN = GND, AV= 40; C(SO) = 200 pF
VSP = VSN = GND to VSP = 30 mV,
VSN = GND, AV= 80; C(SO) = 200 pF
toff
PWM off-time (DRV8702D-Q1)
TOFF = 00
0.5
1
µs
2
4
25
µs
25
TOFF = 01
toff
PWM off-time (DRV8703D-Q1)
TOFF = 10
50
µs
100
TOFF = 11
200
t(BLANK)
PWM blanking time
2
µs
(1) Ensured by design
Copyright © 2017, Texas Instruments Incorporated
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