MSP430F6779A Datasheet, PDF (54/176 Pages) Texas Instruments – Polyphase Metering SoCs

MSP430F6779A, MSP430F6778A, MSP430F6777A, MSP430F6776A, MSP430F6775A
MSP430F6769A, MSP430F6768A, MSP430F6767A, MSP430F6766A, MSP430F6765A
MSP430F6749A, MSP430F6748A, MSP430F6747A, MSP430F6746A, MSP430F6745A
SLAS982 – MAY 2014
www.ti.com
Table 5-42. SD24_B Performance
f_SD24 = 1 MHz, SD24OSRx = 256, SD24REFON = 1
PARAMETER
TEST CONDITIONS
SD24GAIN: 1
3V
INL
Integral nonlinearity, end-
point fit
SD24GAIN: 8
3V
SD24GAIN: 32
3V
SD24GAIN: 1
3V
SD24GAIN: 2
3V
SD24GAIN: 4
3V
SD24GAIN: 8
3V
G_nom
Nominal gain
SD24GAIN: 16
3V
SD24GAIN: 32
3V
SD24GAIN: 64
3V
SD24GAIN: 128
3V
E_G
Gain error⁽¹⁾
SD24GAIN: 1, with external reference (1.2 V)
3V
SD24GAIN: 8, with external reference (1.2 V)
3V
SD24GAIN: 32, with external reference (1.2 V)
3V
Gain error temperature
ΔE_G/ΔT
coefficient⁽²⁾, internal
SD24GAIN: 1, 8, or 32 (with internal reference)
3V
reference
Gain error temperature
SD24GAIN: 1 (with external reference)
3V
ΔE_G/ΔT
coefficient⁽²⁾, external
SD24GAIN: 8 (with external reference)
3V
reference
SD24GAIN: 32 (with external reference)
3V
SD24GAIN: 1
3V
ΔE_G/ΔV_CC Gain error vs V_CC ⁽³⁾
SD24GAIN: 8
3V
SD24GAIN: 32
3V
SD24GAIN: 1 (with Vdiff = 0V)
3V
E_OS[V]
Offset error⁽⁴⁾
SD24GAIN: 8
3V
SD24GAIN: 32
3V
SD24GAIN: 1 (with Vdiff = 0V)
3V
E_OS[FS]
Offset error⁽⁴⁾
SD24GAIN: 8
3V
SD24GAIN: 32
3V
SD24GAIN: 1
3V
ΔE_OS/ΔT
Offset error temperature
coefficient ⁽⁵⁾
SD24GAIN: 8
3V
SD24GAIN: 32
3V
SD24GAIN: 1
3V
ΔE_OS/ΔV_CC Offset error vs V_CC ⁽⁶⁾
SD24GAIN: 8
3V
SD24GAIN: 32
3V
MIN
-0.01
-0.01
-0.01
-1
-2
-2
-0.2
-0.7
-1.4
TYP MAX UNIT
+0.01
+0.01 % of FSR
+0.01
1
2
4
8
16
32
64
128
+1
+2
%
+2
80 ppm/°C
15
15 ppm/°C
15
0.1
0.1
%/V
0.4
2.3
1
mV
0.5
+0.2 % FS
+0.7 % FS
+1.4 % FS
2
0.25
µV/°C
0.1
500
125
µV/V
50
(1) The gain error E_G specifies the deviation of the actual gain G_act from the nominal gain G_nom: E_G = (G_act - G_nom)/G_nom. It covers process,
temperature and supply voltage variations.
(2) The gain error temperature coefficient ΔE_G/ ΔT specifies the variation of the gain error E_G over temperature (E_G(T) = (G_act(T) -
G_nom)/G_nom) using the box method (that is, minimum and maximum values):
ΔE_G/ ΔT = (MAX(E_G(T)) - MIN(E_G(T) ) / (MAX(T) - MIN(T)) = (MAX(G_act(T)) - MIN(G_act(T)) / G_nom / (MAX(T) - MIN(T))
with T ranging from -40°C to +85°C.
(3) The gain error vs V_CC coefficient ΔE_G/ ΔV_CC specifies the variation of the gain error E_G over supply voltage (E_G(V_CC) = (G_act(V_CC) -
G_nom)/G_nom) using the box method (that is, minimum and maximum values):
ΔE_G/ ΔV_CC = (MAX(E_G(V_CC)) - MIN(E_G(V_CC) ) / (MAX(V_CC) - MIN(V_CC)) = (MAX(G_act(V_CC)) - MIN(G_act(V_CC)) / G_nom / (MAX(V_CC) -
MIN(V_CC))
with V_CC ranging from 2.4V to 3.6V.
(4) The offset error E_OS is measured with shorted inputs in 2s complement mode with +100% FS = V_REF/G and -100% FS = -V_REF/G.
Conversion between E_OS [FS] and E_OS [V] is as follows: E_OS [FS] = E_OS [V]×G/V_REF; E_OS [V] = E_OS [FS]×V_REF/G.
(5) The offset error temperature coefficient ΔE_OS/ ΔT specifies the variation of the offset error E_OS over temperature using the box method
(that is, minimum and maximum values):
ΔE_OS/ ΔT = (MAX(E_OS(T)) - MIN(E_OS(T) ) / (MAX(T) - MIN(T))
with T ranging from -40°C to +85°C.
(6) The offset error vs V_CC ΔE_OS/ ΔV_CC specifies the variation of the offset error E_OS over supply voltage using the box method (that is,
minimum and maximum values):
ΔE_OS/ ΔV_CC = (MAX(E_OS(V_CC)) - MIN(E_OS(V_CC) ) / (MAX(V_CC) - MIN(V_CC))
with V_CC ranging from 2.4V to 3.6V.
54
Specifications
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