LM3S5739 Datasheet, PDF (268/856 Pages) Texas Instruments – Stellaris® LM3S5739 Microcontroller

Internal Memory
7.3
7.3.1
7.3.1.1
7.3.1.2
7.3.1.3
7.3.2
Interrupts are always cleared (for both the FCMIS and FCRIS registers) by writing a 1 to the
corresponding bit in the Flash Controller Masked Interrupt Status and Clear (FCMISC) register
(see page 278).
Flash Memory Initialization and Configuration
Flash Programming
The Stellaris devices provide a user-friendly interface for flash programming. All erase/program
operations are handled via three registers: FMA, FMD, and FMC.
During a Flash memory operation (write, page erase, or mass erase) access to the Flash memory
is inhibited. As a result, instruction and literal fetches are held off until the Flash memory operation
is complete. If instruction execution is required during a Flash memory operation, the code that is
executing must be placed in SRAM and executed from there while the flash operation is in progress.
To program a 32-bit word
1. Write source data to the FMD register.
2. Write the target address to the FMA register.
3. Write the flash write key and the WRITE bit (a value of 0xA442.0001) to the FMC register.
4. Poll the FMC register until the WRITE bit is cleared.
To perform an erase of a 1-KB page
1. Write the page address to the FMA register.
2. Write the flash write key and the ERASE bit (a value of 0xA442.0002) to the FMC register.
3. Poll the FMC register until the ERASE bit is cleared.
To perform a mass erase of the flash
1. Write the flash write key and the MERASE bit (a value of 0xA442.0004) to the FMC register.
2. Poll the FMC register until the MERASE bit is cleared.
Nonvolatile Register Programming
This section discusses how to update registers that are resident within the Flash memory itself.
These registers exist in a separate space from the main Flash memory array and are not affected
by an ERASE or MASS ERASE operation. The bits in these registers can be changed from 1 to 0
with a write operation. Prior to being committed, the register contents are unaffected by any reset
condition except power-on reset, which returns the register contents to the original value. By
committing the register values using the COMT bit in the FMC register, the register contents become
nonvolatile and are therefore retained following power cycling. Once the register contents are
committed, the only way to restore the factory default values is to perform the sequence described
in the section called “Recovering a "Locked" Device” on page 166.
With the exception of the USER_DBG register, the settings in these registers can be tested before
committing them to Flash memory. For the USER_DBG register, the data to be written is loaded
into the FMD register before it is committed. The FMD register is read only and does not allow the
USER_DBG operation to be tried before committing it to nonvolatile memory.
268
November 17, 2011
Texas Instruments-Production Data