SMJ320C40_15 Datasheet, PDF (22/65 Pages) Texas Instruments – DIGITAL SIGNAL PROCESSORS

SMJ320C40, TMP320C40
DIGITAL SIGNAL PROCESSORS
SGUS017H -- OCTOBER 1993 -- REVISED OCTOBER 2001
Pad Number One
SMJ320C40 (Rev. 5) Inner Lead Bond (ILB) Information for TAB
325
Die Side Number 4
244
1
XXXXX
243
Die Designator
Die Side Number 1
Die Side Number 3
Zero-Zero
(Origin)
81
82
Die Side Number 2
163
162
Figure 4. SMJ320C40 Die Numbering Format
(See Table 2)
The inner lead bond (ILB) pitch for the tape automated bonding (TAB) leadframe is the same as the die bond
pad pitch. Table 2 provides a reference for the following:
A. The TAB lead numbers. The TAB lead numbers are the same as the die bond pad numbers.
B. The C40 signal identities in relation to the pad numbers
C. There are 325 bond pad locations, 325 TAB leads, and 324 test pad locations.
D. The C40 X-,Y-coordinates, where bond pad 82 serves as the origin, (0,0)
E. The inner lead bond pitch (ILB) is the same as the die bond pitch.
F. The outer lead pitch is 0.25 ± 0.01 mm.
G. The test pad pitch is 0.40 ± 0.01 mm.
H. The tape width is 48 mm.
I. Outer lead bond (OLB) 18, 19 connect to test pad 18.
In addition, the following notes are significant:
J. X,Y coordinate data is in microns.
K. Average pitch is 126 μm (4.96 mils).
L. Smallest pitch value is 126 μm (4.96 mils).
M. The active silicon dimensions are 12424.86 μm × 12035.52 μm (489.16 mils × 473.83 mils).
N. The die size is approximately 12598.40 μm × 12192.00 μm (496.00 mils × 480.00 mils).
O. Distance from diced silicon to polyimide support ring is 889 μm (35.0 mils).
P. Bond pad dimensions are 108.00 μm × 108.00 μm (4.25 mils × 4.25 mils).
Q. Center of bond pad to edge of die minimum (without scribe) = 107.80 μm (4.24 mils).
R. The nominal die thickness is 381 ± 50.8 μm (15 ± 2 mils).
S. The polyimide encapsulant thickness is approximately 304.8 μm (12 mils).
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