CD00161566 Datasheet, PDF (98/105 Pages) STMicroelectronics – nullMedium-density performance line ARM-based 32-bit MCU

Revision history
STM32F103x8, STM32F103xB
Table 61. Document revision history (continued)
Date
Revision
Changes
18-Oct-2007
STM32F103CBT6, STM32F103T6 and STM32F103T8 root part
numbers added (see Table 2: STM32F103xx medium-density device
features and peripheral counts)
VFQFPN36 package added (see Section 6: Package characteristics). All
packages are ECOPACK® compliant. Package mechanical data inch
values are calculated from mm and rounded to 4 decimal digits (see
Section 6: Package characteristics).
Table 5: Medium-density STM32F103xx pin definitions updated and
clarified.
Table 26: Low-power mode wakeup timings updated.
T_A min corrected in Table 12: Embedded internal reference voltage.
Note 2 added below Table 22: HSE 4-16 MHz oscillator characteristics.
V_ESD(CDM) value added to Table 32: ESD absolute maximum ratings.
Note 4 added and V_OH parameter description modified in Table 36:
Output voltage characteristics.
Note 1 modified under Table 37: I/O AC characteristics.
Equation 1 and Table 47: RAIN max for fADC = 14 MHz added to
Section 5.3.18: 12-bit ADC characteristics.
V_AIN, t_S max, t_CONV, V_REF+ min and t_lat max modified, notes modified
and t_latr added in Table 46: ADC characteristics.
Figure 37: ADC accuracy characteristics updated. Note 1 modified
below Figure 38: Typical connection diagram using the ADC.
Electrostatic discharge (ESD) on page 60 modified.
Number of TIM4 channels modified in Figure 1: STM32F103xx
performance line block diagram.
3
Maximum current consumption Table 13, Table 14 and Table 15
updated. V_hysmodified in Table 35: I/O static characteristics.
Table 49: ADC accuracy updated. t_VDD modified in Table 10: Operating
conditions at power-up / power-down. V_FESD value added in Table 30:
EMS characteristics.
Values corrected, note 2 modified and note 3 removed in Table 26: Low-
power mode wakeup timings.
Table 16: Typical and maximum current consumptions in Stop and
Standby modes: Typical values added for V_DD/V_BAT = 2.4 V, Note 2
modified, Note 2 added.
Table 21: Typical current consumption in Standby mode added. On-chip
peripheral current consumption on page 50 added.
ACC_HSI values updated in Table 24: HSI oscillator characteristics.
V_prog added to Table 28: Flash memory characteristics.
Upper option byte address modified in Figure 11: Memory map.
Typical f_LSI value added in Table 25: LSI oscillator characteristics and
internal RC value corrected from 32 to 40 kHz in entire document.
T_{S_temp} added to Table 50: TS characteristics. N_END modified in
Table 29: Flash memory endurance and data retention.
T_{S_vrefint} added to Table 12: Embedded internal reference voltage.
Handling of unused pins specified in General input/output characteristics
on page 62. All I/Os are CMOS and TTL compliant. Figure 39: Power
supply and reference decoupling (VREF+ not connected to VDDA)
modified.
t_JITTER and f_VCO removed from Table 27: PLL characteristics.
Appendix A: Important notes on page 81 added.
Added Figure 16, Figure 17, Figure 19 and Figure 21.
98/105
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