CD00161566 Datasheet, PDF (97/105 Pages) STMicroelectronics – nullMedium-density performance line ARM-based 32-bit MCU

STM32F103x8, STM32F103xB
8
Revision history
Revision history
Date
Table 61. Document revision history
Revision
Changes
01-jun-2007
20-Jul-2007
1
Initial release.
Flash memory size modified in Note 9, Note 5, Note 7, Note 7 and
BGA100 pins added to Table 5: Medium-density STM32F103xx pin
definitions. Figure 3: STM32F103xx performance line LFBGA100 ballout
added.
T_HSE changed to T_LSE in Figure 23: Low-speed external clock source
AC timing diagram. V_BAT ranged modified in Power supply schemes.
t_SU(LSE) changed to t_SU(HSE) in Table 22: HSE 4-16 MHz oscillator
characteristics. I_DD(HSI) max value added to Table 24: HSI oscillator
characteristics.
Sample size modified and machine model removed in Electrostatic
discharge (ESD).
Number of parts modified and standard reference updated in Static
latch-up. 25 °C and 85 °C conditions removed and class name modified
in Table 33: Electrical sensitivities. R_PU and R_PD min and max values
added to Table 35: I/O static characteristics. R_PU min and max values
2
added to Table 38: NRST pin characteristics.
Figure 32: I2C bus AC waveforms and measurement circuit and
Figure 31: Recommended NRST pin protection corrected.
Notes removed below Table 9, Table 38, Table 44.
I_DD typical values changed in Table 11: Maximum current consumption
in Run and Sleep modes. Table 39: TIMx characteristics modified.
t_STAB, V_REF+ value, t_lat and f_TRIG added to Table 46: ADC
characteristics.
In Table 29: Flash memory endurance and data retention, typical
endurance and data retention for T_A = 85 °C added, data retention for T_A
= 25 °C removed.
V_BG changed to V_REFINT in Table 12: Embedded internal reference
voltage. Document title changed. Controller area network (CAN) section
modified.
Figure 14: Power supply scheme modified.
Features on page 1 list optimized. Small text changes.
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