CD00161566 Datasheet, PDF (40/105 Pages) STMicroelectronics – nullMedium-density performance line ARM-based 32-bit MCU

Electrical characteristics
STM32F103x8, STM32F103xB
5.3.3
Embedded reset and power control block characteristics
The parameters given in Table 11 are derived from tests performed under ambient
temperature and V_DD supply voltage conditions summarized in Table 9.
Table 11. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
PLS[2:0]=000 (rising edge) 2.1 2.18 2.26
PLS[2:0]=000 (falling edge)
2 2.08 2.16
PLS[2:0]=001 (rising edge) 2.19 2.28 2.37
PLS[2:0]=001 (falling edge) 2.09 2.18 2.27
PLS[2:0]=010 (rising edge) 2.28 2.38 2.48
PLS[2:0]=010 (falling edge) 2.18 2.28 2.38
PLS[2:0]=011 (rising edge) 2.38 2.48 2.58
V_PVD
Programmable voltage ^{PLS[2:0]=011 (falling edge)}
detector level selection _{PLS[2:0]=100 (rising edge)}
2.28 2.38 2.48
2.47 2.58 2.69
V
PLS[2:0]=100 (falling edge) 2.37 2.48 2.59
PLS[2:0]=101 (rising edge) 2.57 2.68 2.79
PLS[2:0]=101 (falling edge) 2.47 2.58 2.69
PLS[2:0]=110 (rising edge) 2.66 2.78 2.9
PLS[2:0]=110 (falling edge) 2.56 2.68 2.8
PLS[2:0]=111 (rising edge) 2.76 2.88 3
V_PVDhyst(2) PVD hysteresis
V_POR/PDR
Power on/power down
reset threshold
V_PDRhyst(2) PDR hysteresis
T_RSTTEMPO(2) Reset temporization
PLS[2:0]=111 (falling edge)
Falling edge
Rising edge
2.66 2.78 2.9
100
mV
1.8^{(1) 1.88 1.96}
V
1.84 1.92 2.0
40
mV
1 2.5 4.5 ms
1. The product behavior is guaranteed by design down to the minimum V_POR/PDR value.
2. Guaranteed by design, not tested in production.
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