CD00161566 Datasheet, PDF (58/105 Pages) STMicroelectronics – nullMedium-density performance line ARM-based 32-bit MCU

Electrical characteristics
STM32F103x8, STM32F103xB
5.3.10
Symbol
Table 28. Flash memory characteristics (continued)
Parameter
Conditions
Min⁽¹⁾ Typ Max⁽¹⁾ Unit
Read mode
f_HCLK = 72 MHz with 2 wait
-
states, V_DD = 3.3 V
I_DD Supply current
Write / Erase modes
f_HCLK = 72 MHz, V_DD = 3.3 V
-
Power-down mode / Halt,
V_DD = 3.0 to 3.6 V
-
V_prog Programming voltage
2
1. Guaranteed by design, not tested in production.
-
20
mA
-
5
-
50
µA
-
3.6
V
Table 29. Flash memory endurance and data retention
Symbol Parameter
Conditions
Value
Min⁽¹⁾ Typ Max
Unit
N_END Endurance
T_A = –40 to +85 °C (6 suffix versions)
T_A = –40 to +105 °C (7 suffix versions)
10
-
1 kcycle⁽²⁾ at T_A = 85 °C
30
-
t_RET Data retention 1 kcycle⁽²⁾ at T_A = 105 °C
10
-
10 kcycles⁽²⁾ at T_A = 55 °C
20
-
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
- kcycles
-
- Years
-
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
 Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
 FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V_DD and
V_SS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 30. They are based on the EMS levels and classes
defined in application note AN1709.
58/105
DocID13587 Rev 16