CD00161566 Datasheet, PDF (39/105 Pages) STMicroelectronics – nullMedium-density performance line ARM-based 32-bit MCU

STM32F103x8, STM32F103xB
Electrical characteristics
5.3.2
Table 9. General operating conditions (continued)
Symbol
Parameter
Conditions
Min Max Unit
Standard IO
–0.3
V_DD+
0.3
V_IN
I/O input voltage
FT IO^{(3) 2 V < VDD  3.6 V –0.3}
5.5
V
V_DD = 2 V
–0.3 5.2
BOOT0
0
5.5
LFBGA100
454
LQFP100
434
Power dissipation at T_A =
P_D
18055°C°Cfofor rsusuffifxfix67o^{(4r)TA =}
UFBGA100
TFBGA64
LQFP64
LQFP48
339
308
mW
444
363
UFQFPN48
624
VFQFPN36
1000
Ambient temperature for 6
Maximum power dissipation –40 85
suffix version
Low power dissipation⁽⁵⁾
–40 105
TA
Ambient temperature for 7
suffix version
Maximum power dissipation –40 105
Low power dissipation⁽⁵⁾
°C
–40 125
6 suffix version
TJ
Junction temperature range
7 suffix version
–40 105
–40 125
1. When the ADC is used, refer to Table 46: ADC characteristics.
2.
It is recommended to power
between V_DD and V_DDA can
Vbe_{DDtoalenrdatVeDdDdAurfrinogmptohwe esra-umpeasnodurocpee.rAatmiona.ximum}
difference
of
300
mV
3. To sustain a voltage higher than V_DD+0.3 V, the internal pull-up/pull-down resistors must be disabled.
4.
c^Ifh^Ta^Ara^isct^le^or^wis^eti^rc^, s^hio^gn^hep^ra^Pge^D
values
93).
are
allowed
as
long
as
T_J
does
not
exceed
T_Jmax
(see
Table
6.2:
Thermal
5.
In low
Table
6^p.^o2^w: T^erh^deⁱr^sm^sa^ipl^ac^th^ioaⁿra^sc^tate^teri^,s^Ttic^As^co^anⁿ
be extended
page 93).
to
this
range
as
long
as
T_J
does
not
exceed
T_Jmax
(see
Operating conditions at power-up / power-down
Subject to general operating conditions for T_A.
Table 10. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
Unit
t_VDD
V_DD rise time rate
V_DD fall time rate
0

µs/V
20

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