C8051F50X Datasheet, PDF (47/312 Pages) Silicon Laboratories – Mixed Signal ISP Flash MCU Family

C8051F50x-F51x
Table 5.6. Internal High-Frequency Oscillator Electrical Characteristics
V_DD = 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Oscillator Frequency
IFCN = 111b;
24 – 0.5% 24¹ 24 + 0.5%
Units
MHz
Oscillator Supply Current 
(from V_DD)
Internal Oscillator On
OSCICN[7:6] = 11b
—
830
1300
µA
Internal Oscillator Suspend Temp = 25 °C
—
66
—
µA
OSCICN[7:6] = 00b
ZTCEN = 1
Temp = 85 °C
Temp = 125 °C
—
110
—
—
190
—
Wake-up Time From Suspend OSCICN[7:6] = 00b
—
1
—
µs
Power Supply Sensitivity
Constant Temperature
—
0.10
—
%/V
Temperature Sensitivity²
Constant Supply
TC₁
—
5.0
—
ppm/°C
TC₂
—
–0.65
—
ppm/°C²
1. This is the average frequency across the operating temperature range
2. Use temperature coefficients TC₁ and TC₂ to calculate the new internal oscillator frequency using the
following equation:
f(T) = f0 * (1 + TC₁*(T - T0) + TC₂*(T - T0)²)
where f0 is the internal oscillator frequency at 25 °C and T0 is 25 °C.
Figure 5.2. Typical Internal High-Frequency Oscillator Over Temperature
Rev. 1.1
47