HYB39S256400 Datasheet, PDF (56/56 Pages) Siemens Semiconductor Group – 256 MBit Synchronous DRAM

HYB 39S256400/800/160T
256 MBit Synchronous DRAM
22. Precharge Termination of a Burst
22.1. CAS Latency = 2
Burst Length = 8 or Full Page, CAS Latency = 2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t _CK2
CKE High
CS
RAS
CAS
WE
BS
AP
RAx
RAy
RAz
Addr. RAx
CAx
DQM
RAy
CAy
RAz
CAz
t _RP
t _RP
t _RP
Hi Z
DQ
DAx0 DAx1 DAx2 DAx3
Ay0 Ay1 Ay2
Az0 Az1 Az2
Activate
Command
Bank A
Write
Command
Bank A
Precharge
Command
Bank A
Precharge Termination
of a Write Burst.
Write Data is masked.
Activate
Command
Bank A
Read
Command
Bank A
Precharge
Command
Bank A
Activate
Command
Bank A
Read
Command
Bank A
Precharge
Command
Bank A
Precharge Termination
of a Read Burst.
SPT03933
Semiconductor Group
56
1998-10-01