HYB39S256400 Datasheet, PDF (31/56 Pages) Siemens Semiconductor Group – 256 MBit Synchronous DRAM

HYB 39S256400/800/160T
256 MBit Synchronous DRAM
7. Burst Write and Read with Auto Precharge
7.1. Burst Write with Auto Precharge
(Burst Length = 2, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command
Bank A
Active
NOP
NOP
Write A
Auto Precharge
NOP NOP
t _WR
NOP NOP
t _RP
NOP
DQ’s
DIN A0 DIN A1
Begin Auto Precharge
Bank can be reactivated after t _RP
SPT03909
7.2. Burst Read with Auto Precharge
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command
Read A
with AP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CAS
latency = 2
t _CK2, DQ’s
CAS
latency = 3
t _CK3, DQ’s
t _RP
DOUT A0 DOUT A1 DOUT A2 DOUT A3
t _RP
DOUT A0 DOUT A1 DOUT A2 DOUT A3
Begin Auto Precharge
Bank can be reactivated after t _RP
SPT03721
Semiconductor Group
31
1998-10-01