HYB39S256400 Datasheet, PDF (28/56 Pages) Siemens Semiconductor Group – 256 MBit Synchronous DRAM

HYB 39S256400/800/160T
256 MBit Synchronous DRAM
4.2. Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
DQMx
Command NOP
CAS
latency = 2
t _CK2, DQ’s
Bank A
Activate
Write latency t _DQW of DQMx
t _DQZ
1 Clk Interval
NOP NOP Read A Write A NOP NOP NOP
Must be Hi-Z before
the Write Command
DIN A0
DIN A1
DIN A2
DIN A3
"H" or "L"
SPT03413
4.3. Non-Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
DQM
t _DQW
t _DQZ
Command NOP Read A NOP NOP Read A NOP Write B NOP NOP
CAS
latency = 2
t _CK2, DQ’s
Must be Hi-Z before
the Write Command
DOUT A0 DOUT A1
DIN B0
DIN B1
DIN B2
CAS
latency = 3
t _CK3, DQ’s
DOUT A0
DIN B0 DIN B1 DIN B2
"H" or "L"
SPT03940
Semiconductor Group
28
1998-10-01