HYB39S256400 Datasheet, PDF (50/56 Pages) Siemens Semiconductor Group – 256 MBit Synchronous DRAM

HYB 39S256400/800/160T
256 MBit Synchronous DRAM
19. Random Row Write (Interleaving Banks) with Precharge
19.1. CAS Latency = 2
Burst Length = 8, CAS Latency = 2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t _CK2
CKE High
CS
RAS
CAS
WE
BS
AP
RAx
RBx
RAy
Addr. RAx
DQM
Hi-Z
DQ
CAx
t _RCD
RBx
CBx
RAy
t _WR
t _RP
CAy
t _WR
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3 DAy4
Activate Write
Command Command
Bank A Bank A
Activate
Command
Bank B
Write
Command
Bank B
Activate
Command
Bank A
Precharge
Command
Bank A
Precharge
Command
Bank B
Write
Command
Bank A
SPT03927
Semiconductor Group
50
1998-10-01