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HYB39S256400 Datasheet, PDF (26/56 Pages) Siemens Semiconductor Group – 256 MBit Synchronous DRAM
HYB 39S256400/800/160T
256 MBit Synchronous DRAM
3. Read Interrupted by a Read
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command Read A Read B NOP NOP NOP NOP NOP NOP NOP
CAS
latency = 2
t CK2, DQ’s
CAS
latency = 3
t CK3, DQ’s
DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3
DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3
SPT03713
Semiconductor Group
26
1998-10-01