HYB39S256400 Datasheet, PDF (10/56 Pages) Siemens Semiconductor Group – 256 MBit Synchronous DRAM

HYB 39S256400/800/160T
256 MBit Synchronous DRAM
Address Input for Mode Set (Mode Register Operation)
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Address Bus (Ax)
Operation Mode
CAS Latency BT ^{Burst Length}
Operation Mode
BA1 Mode
Burst Type
M3
Type
Mode Register (Mx)
0
burst read /
burst write
0
burst read /
single write
0 Sequential
1 Interleave
CAS Latency
M6 M5 M4
Latency
000
001
0 10
011
100
10 1
110
111
Reserved
Reserved
2
3
4
Reserved
Burst Length
M2 M1 M0
Length
Sequential Interleave
000
001
0 10
011
100
10 1
110
111
1
2
4
8
Reserved
1
2
4
8
Reserved
SPB03941
Address Input for Mode Set (Mode Register Operation)
Semiconductor Group
10
1998-10-01