HYB39S256400 Datasheet, PDF (24/56 Pages) Siemens Semiconductor Group – 256 MBit Synchronous DRAM

HYB 39S256400/800/160T
256 MBit Synchronous DRAM
1. Bank Activate Command Cycle
(CAS latency = 3)
T0
T1
T
T
CLK
Address
Bank B
Row Addr.
Command
Bank B
Activate
t _RCD
NOP NOP
"H" or "L"
Bank B
Col. Addr.
Write B
with Auto
Precharge
t _RC
T
T
T
Bank A
Row Addr.
Bank A
Activate
t _RRD
NOP
Bank B
Row Addr.
Bank B
Activate
SPT03784
Semiconductor Group
24
1998-10-01