HYB39S256400 Datasheet, PDF (25/56 Pages) Siemens Semiconductor Group – 256 MBit Synchronous DRAM

HYB 39S256400/800/160T
256 MBit Synchronous DRAM
2. Burst Read Operation
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command Read A NOP NOP NOP NOP NOP NOP NOP NOP
CAS
latency = 2
t _CK2, DQ’s
CAS
latency = 3
t _CK3, DQ’s
DOUT A0 DOUT A1 DOUT A2 DOUT A3
DOUT A0 DOUT A1 DOUT A2 DOUT A3
SPT03712
Semiconductor Group
25
1998-10-01