HYB39S256400 Datasheet, PDF (18/56 Pages) Siemens Semiconductor Group – 256 MBit Synchronous DRAM

HYB 39S256400/800/160T
256 MBit Synchronous DRAM
AC Characteristics ^{1, 2, 3} (cont’d)
T_A = 0 to 70 °C; V_SS = 0 V; V_DD = 3.3 V ± 0.3 V, t_T = 1 ns
Parameter
Symb.
Limit Values
Unit Note
-8
-8B
-10
min. max. min. max. min. max.
Refresh Cycle
Refresh Period
(8192 cycles)
Self Refresh Exit time
t_REF
–
64 –
64 –
64 ms
t_SREX 10 –
10 –
10 –
ns
Read Cycle
Data Out Hold time
t_OH
3
–
3
–
3
–
ns ²
Data Out to Low Impedance t_LZ
time
0 – 0 – 0 – ns
Data Out to High Impedance t_HZ
3
8
3
10 3
10 ns ⁸
time
DQM Data Out Disable
latency
t_DQZ
–
2
–
2
–
2
CLK
Write Cycle
Data Input to Precharge
DQM Write Mask Latency
t_WR
2
–
2
–
2
–
CLK
t_DQW 0
–
0
–
0
–
CLK
Semiconductor Group
18
1998-10-01