HYB39S256400 Datasheet, PDF (48/56 Pages) Siemens Semiconductor Group – 256 MBit Synchronous DRAM

HYB 39S256400/800/160T
256 MBit Synchronous DRAM
18. Random Row Read (Interleaving Banks) with Precharge
18.1. CAS Latency = 2
Burst Length = 8, CAS Latency = 2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t _CK2
CKE High
CS
RAS
CAS
WE
BS
AP
RBx
RAx
RBy
Addr.
DQM
RBx
CBx
t _RCD
Hi-Z
DQ
RAx
CAx
RBy
CBy
t _RP
t _AC2
Bx0 Bx1 Bx2 Bx3 Bx4 Bx5 Bx6 Bx7 Ax0 Ax1 Ax2 Ax3 Ax4 Ax5 Ax6 Ax7
By0 By1
Activate Read
Command Command
Bank B Bank B
Activate
Command
Bank A
Precharge Activate
Command Command
Bank B Bank B
Read
Command
Bank A
Read
Command
Bank B
SPT03925
Semiconductor Group
48
1998-10-01