HYB39S256400 Datasheet, PDF (2/56 Pages) Siemens Semiconductor Group – 256 MBit Synchronous DRAM

HYB 39S256400/800/160T
256 MBit Synchronous DRAM
Ordering Information
Type
Ordering
Code
LVTTL-Version
HYB 39S256400T-8 on request
HYB 39S256400T-8B on request
HYB 39S256400T-10 on request
HYB 39S256800T-8 on request
HYB 39S256800T-8B on request
HYB 39S256800T-10 on request
HYB 39S256800T-8 on request
HYB 39S256800T-8B on request
HYB 39S256800T-10 on request
Package
Description
P-TSOP-54-2 400 mil 125 MHz 4B × 16 M × 4 SDRAM
PC100-222-620
P-TSOP-54-2 400 mil 100 MHz 4B × 16 M × 4 SDRAM
PC100-323-620
P-TSOP-54-2 400 mil 66 MHz 4B × 16 M × 4 SDRAM
PC66-222-820
P-TSOP-54-2 400 mil 125 MHz 4B × 8 M × 8 SDRAM
PC100-222-620
P-TSOP-54-2 400 mil 100 MHz 4B × 8 M × 8 SDRAM
PC100-323-620
P-TSOP-54-2 400 mil 66 MHz 4B × 8 M × 8 SDRAM
PC66-222-820
P-TSOP-54-2 400 mil 125 MHz 4B × 4 M × 16 SDRAM
PC100-222-620
P-TSOP-54-2 400 mil 100 MHz 4B × 4 M × 16 SDRAM
PC100-323-620
P-TSOP-54-2 400 mil 66 MHz 4B × 4 M × 16 SDRAM
PC66-222-820
Pin Description and Pinouts
CLK
Clock Input
CKE
Clock Enable
CS
Chip Select
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Write Enable
A0 - A12
Address Inputs
BA0, BA1
Bank Select
DQ
Data Input/Output
DQM, LDQM, UDQM Data Mask
V_DD
V_SS
V_DDQ
V_SSQ
NC
Power (+ 3.3 V)
Ground
Power for DQ’s (+ 3.3 V)
Ground for DQ’s
Not Connected
Semiconductor Group
2
1998-10-01