K1B6416B6C Datasheet, PDF (9/46 Pages) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C
UtRAM
FUNCTIONAL DESCRIPTION
Table 3. ASYNCHRONOUS 4 PAGE READ & ASYNCHRONOUS WRITE MODE(A15/A14=0/0)
CS
MRS
OE
WE
LB
UB
H
H
X¹⁾
X¹⁾
X¹⁾
X¹⁾
H
L
X¹⁾
X¹⁾
X¹⁾
X¹⁾
L
H
H
H
X¹⁾
X¹⁾
L
H
X¹⁾
X¹⁾
H
H
L
H
L
H
L
H
L
H
L
H
H
L
L
H
L
H
L
L
L
H
H
L
L
H
L
H
H
L
H
L
L
H
H
L
L
L
L
L
H
L
L
L
1. X must be low or high state.
2. In asynchronous mode, Clock and ADV are ignored.
3. /WAIT pin is High-Z in Asynchronous mode.
I/O0~7
High-Z
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
I/O8~15
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
High-Z
Mode
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Mode Register Set
Power
Standby
PAR
Active
Active
Active
Active
Active
Active
Active
Active
Active
Table 4. SYNCHRONOUS BURST READ & ASYNCHRONOUS WRITE MODE(A15/A14=0/1)
CS MRS OE WE LB UB I/O0~7 I/O8~15 CLK ADV
Mode
Power
H
H
X¹⁾
X¹⁾
X¹⁾
X¹⁾ High-Z High-Z
X²⁾
X²⁾
Deselected
Standby
H
L
X¹⁾
X¹⁾
X¹⁾
X¹⁾ High-Z High-Z
X²⁾
X²⁾
Deselected
PAR
L
H
H
H
X¹⁾ X¹⁾ High-Z High-Z X²⁾
H
Output Disabled
Active
L
H
X¹⁾
X¹⁾
H
H High-Z High-Z X²⁾
H
Output Disabled
Active
L
H
X¹⁾
H
X¹⁾ X¹⁾ High-Z High-Z
Read Command
Active
L
H
L
H
L
H
Dout High-Z
H
Lower Byte Read
Active
L
H
L
H
H
L High-Z Dout
H
Upper Byte Read
Active
L
H
L
H
L
L
Dout
Dout
H
Word Read
Active
L
H
H
L
L
H
Din
High-Z X²⁾
or
Lower Byte Write
Active
L
H
H
L
H
L High-Z Din
X²⁾
or
Upper Byte Write
Active
L
H
H
L
L
L
Din
Din
X²⁾
or
Word Write
Active
L
L
H
L
L
L High-Z High-Z X²⁾
or
Mode Register Set
Active
1. X must be low or high state.
2. X means "Don’t care"(can be low, high or toggling).
3. /WAIT is device output signal so does not have any affect to the mode definition. Please refer to each timing diagram for /WAIT pin function.
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Revision 1.0
January 2005