K1B6416B6C Datasheet, PDF (46/46 Pages) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C
PACKAGE DIMENSION
54 BALL FINE PITCH BGA(0.75mm ball pitch)
Top View
B
#A1
Side View
D
C
Min
Typ
Max
A
-
0.75
-
B
5.90
6.00
6.10
B1
-
3.75
-
C
7.90
8.00
8.10
C1
-
5.25
-
D
0.40
0.45
0.50
E
-
0.90
1.00
E1
-
0.55
-
E2
0.30
0.35
0.40
Y
-
-
0.10
Bottom View
B
B1
6
A
B
C
D
E
F
G
H
J
5 4 3 21
UtRAM
Unit: millimeters
B/2
Detail A
A
Y
Notes.
1. Bump counts: 54(9 row x 6 column)
2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are ±0.050 unless
specified beside figures.
4. Typ : Typical
5. Y is coplanarity: 0.10(Max)
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Revision 1.0
January 2005