K1B6416B6C Datasheet, PDF (18/46 Pages) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C
UtRAM
Table 13. PRODUCT LIST
Part Name
K1B6416B6C
Industrial Temperature Products(-40~85°C)
Function
1.8V, 70ns, 66MHz
Table 14. ABSOLUTE MAXIMUM RATINGS¹⁾
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.2 to VCC+0.3V
V
Power supply voltage relative to Vss
VCC
-0.2 to 2.5V
V
Power Dissipation
PD
1.0
W
Storage temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
-40 to 85
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reli-
ability.
Table 15. RECOMMENDED DC OPERATING CONDITIONS¹⁾
Item
Power supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: VCC+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
VCC
Vss
VIH
VIL
Min
1.7
0
0.8 x VCC
-0.2³⁾
Typ
1.85
0
-
-
Max
2.0
0
VCC+0.2²⁾
0.4
Unit
V
V
V
V
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Revision 1.0
January 2005