K1B6416B6C Datasheet, PDF (4/46 Pages) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C
CONTENTS
Revision History
Features and General Description
Pin Description
Power Up Sequence
Functional Description
Mode Register Setting Operation
Mode Register Setting Timing
Asynchronous Operation
Asynchronous 4 Page Read Operation
Asynchronous Write Operation
Asynchronous Write Operation in Synchronous Mode
Synchronous Burst Operation
Synchronous Burst Read Operation
Synchronous Burst Write Operation
Synchronous Burst Operation Terminology
Clock
Latency Count
Burst Length
Burst Stop
WAIT Control
Burst Type
Low Power Features
Internal TCSR
Driver Strength Optimization
Partial Array Refresh(PAR) Mode
Product List
Absolute Maximum Ratings
Recommended DC Operating Conditions
Capacitance
DC and Operating Characteristics
Asynchronous AC Characteristics
Asynchronous Timing Waveforms
Synchronous AC Characteristics
Synchronous Timing Waveforms
Transition Timing Waveforms
Package Dimension
UtRAM
Page
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46
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Revision 1.0
January 2005