K1B6416B6C Datasheet, PDF (21/46 Pages) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C
ASYNCHRONOUS READ TIMING WAVEFORM
Fig.15 TIMING WAVEFORM OF ASYNCHRONOUS READ CYCLE (MRS=VIH, WE=VIH, WAIT=High-Z)
Address
CS
UB, LB
OE
Data out
tCSHP(A)
tRC
tAA
tCO
tBA
High-Z
tOE
tOLZ
tBLZ
tLZ
tOH
Data Valid
tCHZ
tBHZ
tOHZ
UtRAM
(ASYNCHRONOUS READ CYCLE)
1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels.
2. At any given temperature and voltage condition, tCHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
3. In asynchronous read cycle, Clock, ADV and WAIT signals are ignored.
Table 19. ASYNCHRONOUS READ AC CHARACTERISTICS
Symbol
tRC
tAA
tCO
tBA
tOE
tOH
tCSHP(A)
Speed
Min
Max
70
-
-
70
-
70
-
35
-
35
3
-
10
-
Units
ns
ns
ns
ns
ns
ns
ns
Symbol
tOLZ
tBLZ
tLZ
tCHZ
tBHZ
tOHZ
Speed
Min
Max
5
-
5
-
10
-
0
12
0
12
0
12
Units
ns
ns
ns
ns
ns
ns
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Revision 1.0
January 2005