K1B6416B6C Datasheet, PDF (3/46 Pages) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C
Fig.1 PIN DESCRIPTION
1
2
3
4
5
6
A
LB
OE
A0
A1
A2 MRS
B
I/O8 UB
A3
A4
CS I/O0
C
I/O9 I/O10 A5
A6 I/O1 I/O2
D
VSSQ I/O11 A17
A7
I/O3 Vcc
E
VCCQ I/O12 A21 A16 I/O4 Vss
F
I/O14 I/O13 A14 A15 I/O5 I/O6
G
I/O15 A19 A12 A13 WE I/O7
H
A18 A8
A9 A10 A11 A20
J
WAIT CLK ADV NC
NC
NC
54-FBGA: Top View(Ball Down)
UtRAM
Table 2. PIN DESCRIPTION
Name
Function
Name
Function
CLK Clock Input
I/O0~I/O15 Data Inputs/Outputs
ADV Address Input Valid VCC/VCCQ Power Supply
MRS Mode Register set Vss/VSSQ Ground
CS Chip Select
UB Upper Byte(I/O8~15)
OE Output Enable Input
LB Lower Byte(I/O0~7)
WE Write Enable Input
WAIT Data Availability
A0~A21 Address Inputs
NC Not Connected
-3-
Revision 1.0
January 2005