K1B6416B6C Datasheet, PDF (39/46 Pages) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C
UtRAM
SYNCHRONOUS BURST READ SUSPEND TIMING WAVEFORM
Fig.33 TIMING WAVEFORM OF BURST READ SUSPEND CYCLE(1) [Latency=5,Burst Length=4,WP=Low enable](WE=VIH, MRS=VIH)
CLK
ADV
0
1
2
3
4
5
6
T
tADVH
tADVS
7
8
9
10 11
tAS(B)
tAH(B)
Address
Valid
Don’t Care
tCSS(B)
tBC
CS
LB, UB
OE
Data out
WAIT
tBEL
tBLZ
tOEL
tOLZ
Latency 5
tWL
High-Z
tCD
Undefined DQ0
tWH
tOHZ
tOLZ
DQ1 ^High-Z
DQ1
tOH
tHZ
DQ2 DQ3
tWZ
(SYNCHRONOUS BURST READ SUSPEND CYCLE)
1. If clock input is halted during burst read operation, the data out will be suspended. During the burst read suspend period, OE high
drives data out to high-Z. If clock input is resumed, the suspended data will be out first.
2. /WAIT Low(tWL or tAWL) : Data not available(driven by CS low going edge or ADV low going edge)
/WAIT High(tWH) : Data available(driven by Latency-1 clock)
/WAIT High-Z(tWZ) : Data don’t care(driven by CS high going edge)
3. During suspend period, OE high drives DQ to High-Z and OE low drives DQ to Low-Z.
If OE stays low during suspend period, the previous data will be sustained.
4. Burst Cycle Time(tBC) should not be over 2.5µs.
Table 37. BURST READ SUSPEND AC CHARACTERISTICS
Symbol
tBEL
tOEL
tBLZ
tOLZ
tCD
tOH
Speed
Min
Max
1
-
1
-
5
-
5
-
-
10
3
-
Units
clock
clock
ns
ns
ns
ns
Symbol
tHZ
tOHZ
tWL
tWH
tWZ
Speed
Min
Max
-
12
-
12
-
10
-
12
-
12
Units
ns
ns
ns
ns
ns
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Revision 1.0
January 2005