K1B6416B6C Datasheet, PDF(16/46 Page) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

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K1B6416B6C Datasheet, PDF (16/46 Pages) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

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K1B6416B6C

UtRAM

Table 11. Burst Sequence

Burst Address Sequence(Decimal)

Start

Addr.

4 word Burst

8 word Burst

Wrap1)

16 word Burst

Linear Interleave

Linear

Interleave

Linear

Interleave

0-1-2-3 0-1-2-3

0-1-...-5-6-7 0-1-2-...-6-7 0-1-2-...-14-15 0-1-2-3-4...14-15

1-2-3-0 1-0-3-2

1-2-...-6-7-0 1-0-3-...-7-6

1-2-3-...-15-0

1-0-3-2-5...15-14

2-3-0-1 2-3-0-1 2-3-...-7-0-1 2-3-0-...-4-5

2-3-4-...-0-1

2-3-0-1-6...12-13

3-0-1-2 3-2-1-0 3-4-...-0-1-2 3-2-1-...-5-4

3-4-5-...-1-2

3-2-1-0-7...13-12

4-5-...-1-2-3 4-5-6-...-2-3

4-5-6-...-2-3

4-5-6-7-0...10-11

5-6-...-2-3-4 5-4-7-...-3-2

5-6-7-...-3-4

5-4-7-6-1...11-10

6-7-...-3-4-5 6-7-4-...-0-1

6-7-8-...-4-5

6-7-4-5-2...8-9

7-0-...-4-5-6 7-6-5-...-1-0

7-8-9-...-5-6

7-6-5-4-3...9-8

14-15-0-...-12-13 14-15-12-...-0-1

15-0-1-...-13-14 15-14-13-...-1-0

255

1. Wrap : Burst Address wraps within word boundary and ends after fulfilled the burst length.

2. 256 word Full page burst mode needs to meet tBC(Burst Cycle time) parameter as max. 2500ns.

Full Page(256 word)

Linear

0-1-2-...-254-255

1-2-3-...-255-0

2-3-4-...-255-0-1

3-4-5-...-255-0-1-2

4-5-6-...-255-0-1-2-3

5-6-7-...-255-...-3-4

6-7-8-...-255-...-4-5

7-8-9-...-255-...-5-6

14-15-...-255-...-12-13

15-16-...-255-...-13-14

255-0-1-...-253-254

- 16 -

Revision 1.0

January 2005

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