K1B6416B6C Datasheet, PDF (10/46 Pages) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C
UtRAM
Table 5. SYNCHRONOUS BURST READ & SYNCHRONOUS BURST WRITE MODE(A15/A14=1/0)
CS MRS OE WE LB UB I/O0~7 I/O8~15 CLK ADV
Mode
Power
H
H
X¹⁾
X¹⁾
X¹⁾ X¹⁾ High-Z High-Z X²⁾
X²⁾
Deselected
Standby
H
L
X¹⁾
X¹⁾
X¹⁾ X¹⁾ High-Z High-Z X²⁾
X²⁾
Deselected
PAR
L
H
H
H
X¹⁾ X¹⁾ High-Z High-Z X²⁾
H
Output Disabled
Active
L
H
X¹⁾
X¹⁾
H
H High-Z High-Z X²⁾
H
Output Disabled
Active
L
H
X¹⁾
H
X¹⁾ X¹⁾ High-Z High-Z
Read Command
Active
L
H
L
H
L
H
Dout High-Z
H
Lower Byte Read
Active
L
H
L
H
H
L High-Z Dout
H
Upper Byte Read
Active
L
H
L
H
L
L
Dout
Dout
H
Word Read
Active
L
H
X¹⁾
L or
X¹⁾
X¹⁾ High-Z High-Z
Write Command
Active
L
H
H
X¹⁾
L
H
Din High-Z
H
Lower Byte Write
Active
L
H
H
X¹⁾
H
L High-Z Din
H
Upper Byte Write
Active
L
H
H
X¹⁾
L
L
Din
Din
H
Word Write
Active
L
L
H L or
L
L High-Z High-Z
Mode Register Set
Active
1. X must be low or high state.
2. X means "Don’t care"(can be low, high or toggling).
3. /WAIT is device output signal so does not have any affect to the mode definition. Please refer to each timing diagram for /WAIT pin function.
4. The last data written in the previous Asynchronous write mode is not valid. To make the lastly written data valid, then implement at least one dummy
write cycle before change mode into synchronous burst read and synchronous burst write mode.
5. The data written in Synchronous burst write operation can be corrupted by the next Asynchronous write operation. So the transition from Synchronous
burst write operation to Asynchronous write operation is prohibited.
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Revision 1.0
January 2005