K1B6416B6C Datasheet, PDF (31/46 Pages) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C
SYNCHRONOUS BURST OPERATION TIMING WAVEFORM
Fig.25 TIMING WAVEFORM OF BASIC BURST OPERATION [Latency=5,Burst Length=4](MRS=VIH)
UtRAM
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
T
CLK
tADVH
tADVS
ADV
tBEADV
tAS(B)
tAH(B)
tBEADV
Address
Valid
Don’t Care
tCSS(B)
tBC
CS
Valid
Data out
Undefined DQ0 DQ1 DQ2 DQ3
Data in
D0 D1 D2 D3
D0
Burst Command Clock
Burst Read End Clock
Burst Write End Clock
Table 29. BURST OPERATION AC CHARACTERISTICS
Symbol
T
tBC
tADVS
tADVH
Speed
Min
Max
15
200
-
2500
5
-
7
-
Units
ns
ns
ns
ns
Symbol
tAS(B)
tAH(B)
tCSS(B)
tBEADV
Speed
Min
Max
0
-
7
-
5
-
7
-
Units
ns
ns
ns
ns
- 31 -
Revision 1.0
January 2005