K1B6416B6C Datasheet, PDF (37/46 Pages) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C
UtRAM
SYNCHRONOUS BURST READ STOP TIMING WAVEFORM
Fig.31 TIMING WAVEFORM OF BURST READ STOP by CS [Latency=5,Burst Length=4,WP=Low enable](WE=VIH, MRS=VIH)
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14
CLK
ADV
T
tADVH
tADVS
tAS(B)
tAH(B)
tBSADV
Address
CS
Valid
Don’t Care
tCSS(B)
tCSLH
tCSHP
Valid
LB, UB
OE
Data
WAIT
tBEL
tBLZ
tOEL
tOLZ
Latency 5
tCD
tOH
Undefined DQ0
tCHZ
DQ1
tWL
tWH
High-Z
tWZ
tWL
High-Z
(SYNCHRONOUS BURST READ STOP TIMING)
1. The new burst operation can be issued only after the previous burst operation is finished. For the new burst operation, tBSADV
should be met
2. /WAIT Low(tWL or tAWL) : Data not available(driven by CS low going edge or ADV low going edge)
/WAIT High(tWH) : Data available(driven by Latency-1 clock)
/WAIT High-Z(tWZ) : Data don’t care(driven by CS high going edge)
3. Multiple clock risings are allowed during low ADV period. The burst operation starts from the first clock rising.
4. The burst stop operation should not be repeated for over 2.5µs.
Table 35. BURST READ STOP AC CHARACTERISTICS
Symbol
tBSADV
tCSLH
tCSHP
tBEL
tOEL
tBLZ
tOLZ
Speed
Min
Max
12
-
7
-
5
-
1
-
1
-
5
-
5
-
Units
ns
ns
ns
clock
clock
ns
ns
Symbol
tCD
tOH
tCHZ
tWL
tWH
tWZ
Speed
Min
Max
-
10
3
-
-
12
-
10
-
12
-
12
Units
ns
ns
ns
ns
ns
ns
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Revision 1.0
January 2005