K1B6416B6C Datasheet, PDF (7/46 Pages) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C
Fig.2 FUNCTIONAL BLOCK DIAGRAM
CLK generator
Row
Addresses
Row
select
Precharge circuit.
Memory array
UtRAM
Vcc
Vss
I/O0~I/O7
I/O8~I/O15
Data
controller
Data
controller
Data
controller
I/O Circuit
Column select
Column Addresses
CLK
ADV
MRS
CS
OE
WE
UB
LB
WAIT
Control Logic
-7-
Revision 1.0
January 2005