K1B6416B6C Datasheet, PDF (2/46 Pages) Samsung semiconductor – 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C
UtRAM
4M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM
FEATURES
• Process Technology: CMOS
• Organization: 4M x16 bit
• Power Supply Voltage: 1.7~2.0V
• Three State Outputs
• Supports MRS (Mode Register Set)
• MRS control - MRS Pin Control
• Supports Power Saving modes - Partial Array Refresh mode
Internal TCSR
• Supports Driver Strength Optimization for system environment
power saving.
• Supports Asynchronous 4-Page Read and Asynchronous Write
Operation
• Supports Synchronous Burst Read and Asynchronous Write
Operation(Address Latch Type and Low ADV Type)
• Supports Synchronous Burst Read and Synchronous Burst
Write Operation
• Synchronous Burst(Read/Write) Operation
- Supports 4 word / 8 word / 16 word and Full Page(256 word)
burst
- Supports Linear Burst type & Interleave Burst type
- Latency support : Latency 5 @ 66MHz(tCD 10ns)
Latency 4 @ 54MHz(tCD 10ns)
- Supports Burst Read Suspend in No Clock toggling
- Supports Burst Write Data Masking by /UB & /LB pin control
- Supports WAIT pin function for indicating data availability.
• Max. Burst Clock Frequency : 66MHz
• Package Type : 54 ball FBGA 6.0mm x 8.0mm
GENERAL DESCRIPTION
The world is moving into the mobile multi-media era and there-
fore the mobile handsets need much bigger memory capacity to
handle the multi-media data.
SAMSUNG’s UtRAM products are designed to meet all the
request from the various customers who want to cope with the
fast growing mobile market.
UtRAM is the perfect solution for the mobile market with its low
cost, high density and high performance feature.
K1B6416B6C is fabricated by SAMSUNG′s advanced CMOS
technology using one transistor memory cell.
The device supports the traditional SRAM like asynchronous
bus operation(asynchronous page read and asynchronous
write), the NOR flash like synchronous bus operation(synchro-
nous burst read and asynchronous write) and the fully synchro-
nous bus operation(synchronous burst read and synchronous
burst write).
These three bus operation modes are defined through the mode
register setting.
The device also supports the special features for the standby
power saving. Those are the Partial Array Refresh(PAR) mode
and internal Temperature Compensated Self Refresh(TCSR)
mode.
The optimization of output driver strength is possible through the
mode register setting to adjust for the different data loadings.
Through this driver strength optimization, the device can mini-
mize the noise generated on the data bus during read operation.
Table 1. PRODUCT FAMILY
Product Family
Operating Temp.
Current Consumption
Vcc Range
Clock
Freq.(Max)
Async.
Speed(tAA)
Standby(Max) Standby(Max)
Operating
(ISB1, <40°C) (ISB1, <85°C) (ICC2, ICC3, Max.)
K1B6416B6C-I Industrial(-40~85°C) 1.7~2.0V 66MHz
70ns
120µA
180µA
40mA
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
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Revision 1.0
January 2005