K5P2880YCM Datasheet, PDF (24/29 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM

K5P2880YCM - T085
BLOCK ERASE OPERATION(ERASE ONE BLOCK)
CLE
CE
tWC
WE
tWB
ALE
RE
I/O0~7
R/B
60h
A9 ~ A16 A17 ~ A23
DOh
Page(Row)
Address
Auto Block Erase
Setup Command
Erase Command
tBERS
Busy
70h
I/O 0
I/O0=0 Successful Erase
Read Status I/O0=1 Error in Erase
Command
MANUFACTURE & DEVICE ID READ OPERATION
CLE
CE
WE
ALE
RE
I/O0 ~ 7
90h
Read ID Command
00h
Address 1st Cycle
tREA
ECh
Maker Code
73h
Device Code
- 24 -
Revision 0.0
June. 2001