K5P2880YCM Datasheet, PDF (23/29 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM

K5P2880YCM - T085
READ2 OPERATION(READ ONE PAGE)
CLE
CE
WE
ALE
tR
tWB
RE
I/O0 ~ 7
50h
A0 ~ A7 A9 ~ A16 A17 ~ A23
R/B
M Address A0 ~ A3 :Valid Address
A4 ~ A7 :Dont care
PAGE PROGRAM OPERATION
tAR2
tRR
Dout
Dout
511+M 511+M+1
Dout 527
Selected
Row
512
16
Start
address M
CLE
CE
tWC
tWC
WE
ALE
tWC
tWB tPROG
RE
I/O0 ~ 7
R/B
80h
A0 ~ A7 A9 ~ A16 A17 ~ A23
Sequential Data Column
Input Command Address
Page(Row)
Address
Din
Din
Din
N
N+1
527
1 up to 528 Byte Data
Sequential Input
10h
Program
Command
70h
I/O0
Read Status
Command
I/O0=0 Successful Program
I/O0=1 Error in Program
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Revision 0.0
June. 2001