K5P2880YCM Datasheet, PDF (21/29 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM

K5P2880YCM - T085
* Input Data Latch Cycle
CLE
tCLH
tCH
CE
ALE
tALS
tWC
WE
I/O0~7
tWP
tWH
tDS ^tDH
DIN 0
tWP
tDS ^tDH
DIN 1
tWP
tDS ^tDH
DIN 511
* Sequential Out Cycle after Read(CLE=L, WE=H, ALE=L)
CE
RE
I/O0~7
R/B
tRC
tREA
tREH
tREA
tREA
tCHZ*
Dout
tRR
tRHZ*
Dout
tRHZ*
Dout
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
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Revision 0.0
June. 2001